Method for forming a film on a substrate by activating a reactive gas

ABSTRACT

A thin film forming method includes the steps of supporting a semiconductor substrate having a trench or unevenness thereon in a reaction vessel, introducing a reactive gas into the reaction vessel, activating the reactive gas to form a deposit species, exhausting the interior of the reaction vessel, and cooling the semiconductor substrate below the liquid faction temperature of the deposit species to cause the deposit species to become a material deposited on the semiconductor substrate.

This application is a continuation of application Ser. No. 07/169,577,filed Mar. 17, 1988, now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to a thin film forming method and athin film forming apparatus, and more particularly to a method andapparatus for forming a thin film on a surface of a substrate having atrench or an unevenness thereon, e.g., a semiconductor substrate.

2. Description of the Prior Art

The processes usually used to form a thin film on a surface of asubstrate, such as a semiconductor, are classified broadly into ChemicalVapor Deposition (CVD) and Physical Vapor Deposition (PVD).

The CVD process induces a chemical reaction on the substrate surface orin gaseous phase to form a thin film on the substrate, and this processis used to form insulation films such as a silicon oxide film or asilicon nitride film. The PVD process forms a thin film utilizingcollision against a substrate of depositing materials generated in thegaseous phase, and this process is mainly used for metal film forming.

To achieve satisfactory results, VLSI device fabrication presentlyrequires that thin film is deposited within a trench formed in thesubstrate having an aspect ratio one or more (depth/width).

FIG. 22 is a sectional diagram to show a typical conventional plasma CVDprocess of the prior art (for example, J. L. Vossen & W. Kern, Thin FilmProcesses: Academic Press, 1978). In this process, an insulating film 53is formed by depositing the deposit materials 52, which is in the solidphase generated in gaseous phase within a trench 51 of high aspect ratioformed on a substrate 50, snch as silicon. However, the deposit materialis deposited heavily on a edge 54 of the trench 51, thereby obstructingother deposit material from entering toward a bottom 55 of the trench51. Thus, a cavity 56 is formed within the trench 51 and there is adegradation of stage coating properties on the substrate surface.

To cope with the above problem, a process called the bias sputteringprocess, which is one of the PVD processes, is employed (for example, T.Mogami, M. Morimoto & H. Okabayashi: Extended Abstracts 16th Conf. SolidState Devices & Materials, Kobe, 1984, p. 43). This method is to form aninsulating film, such as a silicon oxide film, by physically sputteringthe substrate surface with ions of argon, for example. In theapplication of this method, the sputtering makes it difficult to havemuch deposition on edges, as shown in FIG. 22, and promotes heavierdeposition on the flat surface portions. Therefore, the problems offorming the cavity 56 and of the stage coating properties are reduced incomparison to the CVD process above.

However, as the deposit material in gaseous phase comes into the trenchon a slant, it is difficult to achieve a good filling within the trenchwith an aspect ratio of one or more. This method actually has a lowdeposition velocity, which means a very low productivity, because of thecompeting reactions between the removal of the deposited film and thefilm deposition by physical sputtering. In addition, the radiationdamage is inevitable because the process is conducted in the plasma.

Recently, an ECR bias sputtering method (for example, H. Oikawa; SEMITECHNOLOGY SYM, 1986, E3-1) was proposed to reduce the oblique incidentelement of the deposit material within the trench. This method lessensthe above-mentioned problem of the oblique incidence of the depositionmaterial within the trench even though the deposit material is in thesolid state, but it is not a complete solution. Appropriate forming of athin film with a trench of the high aspect ratio is still difficult.

Other than the processes described above, a method to form a siliconoxide film using thermal decomposition method a TEOS (R. D. Rung, T.Momose & Nagakubo; IEDM. Tech. Dig. 1982, p. 237) has been proposed.This method as shown in FIG. 23 (a) has a large surface movement rate ofthe deposit material, which makes cavity forming difficult, and realizesgood stage coating properties. However, when an oxide film 57 havingtrenchs formed by this method is cleaned, for example with diluted HFsolution, the removal velocity of the oxide film 57 at the center of thetrench 51 is extremely high, as shown in FIG. 23 (b), and as a result,the flat filling actually cannot be achieved. The reason seems to be thefact that the distortion of the oxide film grown from both sides of thetrench remains around the center. It is thus considered extremelydifficult to fill a trench with a high aspect ratio, even when aconformable thin film forming method is employed.

In FIG. 23 (a), after formation of an oxide film with impurity as asolid phase diffusing source using the thermal CVD method etc., athermal process may be applied to diffuse the impurity around the trenchof the substrate. However, when comparing an oxide film formed on theside wall of the trench and that on a flat surface, the former has lessimpurity density, and a desired resistivity cannot be obtained with thismethod.

SUMMARY OF THE INVENTION

It is an object of the invention to provide an improved thin filmforming process and a forming apparatus for this process which enables agood filling within a trench of high aspect ratio with films of aninsulating material, a semiconductor material, and a metal, etc.

This invention solves the problems of the prior art in thin film formingwith a trench having a high aspect ratio formed on above-mentionedsubstrate, such as semiconductors etc., such as cavity forming in thetrench, degraded stage coating properties on the substrate surface, orradiation damage against the substrate.

BRIEF DESCRIPTION OF DRAWINGS

A more complete appreciation of the invention and many of the attendantadvantages thereof will be readily obtained as the same becomes betterunderstood by reference to the following detailed description whenconsidered in connection with the accompanying drawings, wherein:

FIGS. 1(a), 1(b) and 1(c) are sectional views illustrating steps of amethod in accordance with the invention;

FIGS. 2, 3 and 4 are partial sectional views illustrating formingapparatus in accordance with several embodiments of the invention;

FIGS. 5 and 6 are graphs illustrating functions in accordance withembodiments of the invention;

FIG. 7 is a state diagram illustrating relationships of pressure andtemperature in accordance with the embodiment of the invention;

FIG. 8 is a graph illustrating the relationship of the depositionvelocity and the pressure in accordance with the embodiments of theinvention;

FIGS. 9, 10(a) and 10(b) are sectional views illustrating the functionsin accordance with the embodiment of the invention;

FIGS. 11, 12, 13, 14 and 15 are graphs illustrating differentrelationships of parameters in accordance with the embodiment of theinvention;

FIGS. 16 and 17 are partial sectional views illustrating formingapparatus in accordance with other embodiments of the invention;

FIG. 18 is a graph illustrating the relationship of the depositionvelocity and the substrate temperature in accordance with the invention;

FIGS. 19, 20(a) and 20(b) are sectional views illustrating the steps ofa method in accordance with the another embodiments of the invention;

FIG. 21 is a sectional view illustrating a semiconductor device inaccordance with an other embodiment of the invention;

FIG. 22 is a sectional view illustrating a conventional method;

FIGS. 23(a) and 23(b) are sectional views illustrating steps inaccordance with an another conventional method; and

FIG. 24 is a typical state diagram.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

This invention provides a thin film forming method together with adevice for that method, which cools the substrate not more than theliquefaction point of the deposit species, so that the deposit speciesin gaseous phase can exist on the substrate surface under more stableconditions than those when the deposit species are flowing in gaseousphase.

Referring to FIG. 1, the function of the thin film forming method ofthis invention is explained below.

In FIG. 1 (a), deposit species 32 in a gaseous phase state is depositedwithin a trench 31 with high aspect ratio formed on a substrate 30, suchas a semiconductor. The substrate is cooled to the temperature not morethan the liquefaction temperature point of the deposit species 32, sothe species 32 liquefies and adheres on the substrate surface. Thereference number 33 is a thin film formed within the trench 31 by thedeposit species 32.

By repeating this process, as shown in FIG. 1 (b), thin films 33a arebuilt up within a trench 31 to form a filling. If the process iscontinued after the complete filling up of the trench 31, thin film 33bis formed appropriately over the trench 31 and on the surface of thesubstrate 30.

To explain this phenomenon, FIG. 24 shows, with parameters of thetemperature and the pressure, three phases (gaseous phase, liquid phaseand solid phase) of an active species of a first reactive gas, a secondreactive gas, or their reaction product. As the temperature of thematerial including the reactive gas, etc., described above, decreases,the state changes from the gaseous phase A to the liquid phase B. In ahigh pressure condition, transfer from gaseous phase A to liquid phase Bbecomes distinctive.

For example, if a reactive gas with pressure P_(O) is in the state ofgaseous phase A, when the temperature is lowered to t_(O) (the boundarybetween the gaseous phase and the liquid phase, i.e., the liquefactionpoint) or below, the state changes to the liquid phase.

If the temperature drops more, the state goes to the solid phase.Therefore, this invention utilizes the temperature dependency of threephases above for the trench filling in semiconductor fabrication. Whenonly one kind of gas is used, the substrate temperature shall be set notmore than the liquefaction point of that gas.

As described above, this invention provides an excellent flatness afterthe appropriate filling or plugging of trenchs with a high aspect ratioat low temperature, and is an optimum for VLSI fabrication.

A first embodiment of the thin film forming process according to thisinvention is described below.

Firstly, an apparatus for this process is explained. FIG. 2 is aschematic configuration illustrating the apparatus according to one ofthe embodiments of this invention to be used for this process. Theconfiguration of this apparatus is given below.

In a reaction vessel 1 is accommodated a substrate 3 located on a sampleholder 2. To the reaction vessel 1, active species of a first reactivegas 6 and a second reactive gas 7 are introduced through the gasintroducing pipes 4 and 5, and are exhausted through the exhaust pipe 8connected to the exhausting system. The flow rate of the first and thesecond reactive gases can be adjusted with a mass-flow controller (notshown). The first reactive gas 6 is activated in a microwave dischargeportion 9 connected to the above mentioned gas introducing pipe 4. Thegas introducing pipe 4 is made of a quartz in this embodiment.

Microwave power is supplied from a microwave power source 10 through awaveguide 11 to the discharge portion 9. Activation of the reactive gas6 is performed with the plasma in this embodiment, but it may be donewith the thermal excitation, optical excitation or electron beamexcitation. Pressure in the vessel 1 is set by changing the conductanceof a valve (not shown), and is measured with a diaphragm vacuum gauge(not shown) to be controlled.

Within the above mentioned holder 2, a cooling means 12 is provided tocool the substrate 3, and an additional heating means 13 can beprovided, if required. These means are connected to a control system(not shown) to monitor the temperature of the substrate 3 and keep it ata fixed value not more than the liquefaction point of the active speciesgenerated from the first reactive gas, the second reactive gas and theirreaction products.

The cooling means 12 carries a nitrogen gas coming through a liquidnitrogen to the holder 2 via a cooling pipe (not shown). The coolingmeans is controlled by adjusting the flow rate of the nitrogen gas witha needle valve (not shown) provided in the cooling pipe. A heater isused for the heating means 13, but the cooling and the heating means arenot limited to those described above, and anything that can keep aconstant temperature is acceptable. The substrate is fixed to the abovementioned sample holder so that the substrate can make good thermalcontact with the sample holder.

Areas of the substrate other than the reaction vessel 1 and the sampleholder 2 may have a structure, for example, with an electric currentheater wound around the wall of the vessel 1, to maintain the space inthe reaction vessel 1.

As a thin film forming apparatus relating to this invention, otherembodiments shown in FIG. 3 and 4 may be utilized. The apparatus shownin FIG. 3 is almost the same as the configuration of the apparatus ofFIG. 1, and the same parts are shown with the same reference numbers.The difference of this apparatus from the one in FIG. 2 is that a lightradiation means 16 to radiate a beam 15, e.g., electron, ion or laserbeams, is provided. This light radiation means 16 enables excitation ofthe reactive gas with a light. By using this light excitation, as withthe apparatus shown in FIG. 2, the damage to the substrate 2 and otheradverse influences may be reduced.

Although it is not shown in the figures, the substrate 3 extends into anout of the reaction vessel 1 through another adjacent chamber. Thischamber may be evacuated, or may contain the inert gas with atmosphericor higher pressure. By this "load-locking" of the reaction vessel 1,reproducibility of the process may be remarkably improved.

The thin film forming apparatus shown in FIG. 4 also has almost the sameconfiguration as the one shown in FIG. 2, and the same parts as the FIG.2 are indicated with the same reference numbers. These reference numbersshow a thin film forming apparatus capable of post treatment after thethin film is formed. In this apparatus, after the thin film forming onthe substrate 3, the substrate 3 is carried through a carrying system 17to a thermal treatment chamber 18 by a carrying mechanism (not shown).The substrate 3 carried to the thermal treatment chamber 18 is placed ona holder 20 equipped with a heating means 19, and a thermal treatment isapplied to the substrate. This heating may be conducted by raising thesubstrate temperature instantaneously with radiation from an infraredlamp 21.

By conducting the thermal treatment above, residue, dust, etc., on thesurface of the substrate 3 can be removed, and the film quality of thethin film can be improved.

In the same figure, a reference number 22 indicates a gas inlet port forintroducing an inert gas Z 23, and the reference number 24 is a gatevalve dividing the reaction vessel 1 and the thermal treatment chamber18.

An embodiment of thin film forming process according to this inventionis described below. This explanation refers specifically to theapparatus shown in FIG. 2, but any of the apparatus described above canbe used for this process.

In this embodiment, oxygen (O₂) is used as a first reactive gas, andtetramethylsilane (Si(CH₃)₄ ; TMS) as a second reactive gas. Using asilicon substrate as a substrate, a silicon oxide film is deposited onthis silicon substrate. First, oxygen gas 6, which is the first reactivegas, is introduced through the gas introducing pipe 4 and microwaves of2.45 GHz are discharged to produce an oxygen radical (O*). Then, thisoxygen radical is moved to the reaction vessel 1. Meanwhile, TMS isintroduced to the reaction vessel 1 without discharging. The totalpressure in the reaction vessel 1 is fixed at 2 Torr. The sample holder2 has a built-in stainless steel pipe 12. Cooling nitrogen (N₂) gaspasses through the liquid nitrogen and flows through the pipe 12 to belower the temperature of the substrate 3.

FIG. 5 shows the deposition velocity of the silicon oxide film atvariable substrate temperatures in the above process, and the resultingconfiguration of a trench on the substrate. The flow rates of oxygen andTMS are 56 SCCM and 7 SCCM, respectively, and the trench has an aspectratio of 1.5.

It is seen from this graph that the deposition velocity represented bythe curve A reaches the highest point when the substrate temperature is-40° C. For the filled trench configuration, at a temperature above roomtemperature, the silicon oxide film formed by the reaction of the O*radical and TMS forms a cavity as described in the prior art.

On the other hand, with the decrease of the substrate temperature, theintensive deposition on the trench corners decreases and at thesubstrate temperature of -20° C. or less, the thin film can fully fillthe trench.

FIG. 6 shows the deposition velocity and the deposition configuration atthe different substrate temperatures when the flow ratio of oxygen toTMS is 24. Conditions other than the flow ratio are the same as in FIG.5. FIG. 6 shows a tendency similar to that seen in FIG. 5. It isobserved that this process is optimum for the formation of aninterlaminar insulation film in the multilayer wiring technique.

The inventors of this invention have made a further study to findoptimum conditions for forming a thin film within a trench. Details aredescribed below.

FIG. 7 is a phase diagram of hexamethyldisiloxane and trimethylsilanolwhich can be reaction products by tetramethylsilane (TMS)-oxygen (O₂)active species and tetramethylsilane. As described in the embodimentabove, when the interior pressure of the reaction vessel is 2 Torr, thetrench interior can be filled if the substrate temperature is lowered toabout -20° C. It is assumed from this phase diagram that the liquid usedin the deposition includes tetramethylsilane and/or hexamethyldisiloxaneat a substrate temperature in the range of 20° C. -100° C. and a vesselinternal pressure of less than 10 Torr. It is also considered thatoxidation proceeds while entrapping active oxide species in the liquidlayer. This assumption may be reasonable since the infrared absorptionspectra of this film is nearly identical to that of the plasmapolymerization film of hexamethyldisiloxane.

Thus, when the internal pressure of the reaction vessel is 2 Torr, thesubstrate temperature is required to be not more than -22° C. wherehexamethyldisiloxane is liquid and not less than -100° C. wheretetramethylsilane is a solid.

Consequently, it is necessary to arrange an appropriate thermal contactbetween the substrate and the sample holder, an uniform distribution ofsample temperature, and a correctly measured and controlled temperatureto make the liquefaction possible.

FIG. 8 is a diagram to show the deposition velocity and the depositionconfiguration with changes of internal pressure of the reaction vessel.The substrate temperature is set at -40° C., and the flow rate of TMSand oxygen at 7 SCCM and 168 SCCM respectively. As a result, thedeposition forms a large lump on the substrate surface around 10 Torr,and the trench cannot be filled. As the pressure decreases, however,filling becomes possible and the deposition velocity increases.

The shape of a globule 90 adhered on the substrate surface as a lump canbe expressed by the formula below in the coordinates shown in FIG. 9,using a Laplace equation:

    γ(1/R+Sinφ/r)=ρgz+ΔP.sub.0

where, the reference number 91 indicates the substrate; the maincurvature of the curved surface in the plane of the figure is r/sinφ,and the main curvature perpendicular to this is R, γ represents thesurface tension, ρ is the liquid density and ΔP₀ is the pressuredifference between the inside and the outside of the globule 90. If theglobule 90 is rotation symmetry and the two main curvatures at theapexes are equally b, according to the equation above,

    γ.2/b=ΔP.sub.0

This means that when the pressure difference ΔP₀ is larger with an equalsurface tension γ, the radius of curvature b of the apexes becomessmaller, and results in a long shaped globule as shown in FIGS. 10a and10b. As the pressure of the microwave discharge changes, the types andthe quantity of the oxygen active species may change, the functionalgroup produced on the silicon substrate surface may change, and thecontact angle to the hexamethyldisiloxane or tetramethylsilane maychange.

For these reasons, even in the pressure and temperature range ofliquefaction, it is suitable to set the pressure at the contact angle inthe range where liquid flows into the inside of the trench, and it ispreferable to have a pressure of 10 Torr or less for to process of thisembodiment.

The appropriate pressure should not be less than the temperature of thetriple point of hexamethyldisiloxane or tetramethylsilane, so that theywill be liquefied.

FIG. 11 shows the deposition velocity and deposition configurationchange to the flow ratio of oxygen and tetramethylsilane. From thisfigure, it is seen that the deposition velocity reaches its peak whenthe oxygen/TMS flow ratio is around 20. The trench can be filled with anapproximate oxygen/TMS flow ratio of 4, and the trenches will can befilled at ratios not less than this value. The reason for thisphenomenon is considered to be the fact that, in the formation ofhexamethyldisiloxane from oxygen and TMS, the following reaction occurs.##STR1## where, oxygen/TMS equals 2. Therefore, when tetramethylsilaneis 7 SCCM, the oxygen is required to be 14 SCCM or more, and the flowratio is preferably at least 2 or more for an ideal reaction.

FIG. 12 shows infrared absorption spectra of a deposited film foroxygen/TMS flow ratios of 8 (graph A), 24 (graph B) and 40 (graph C). Anabsorption peak of Si--O--Si is observed in the range from 1200 cm⁻¹ to1000 cm⁻¹, and the film is confirmed to be the silicon oxide film.

Strength changes of the absorption peaks of Si--CH₃, Si-H, O--Hspecified by this Si--O--Si absorption peak to oxygen/TMS flow ratio asshown in FIG. 13. From this figure, it is seen that the larger theoxygen/TMS becomes, the more the silicon oxides. Reference numbers incircles 1 through 7 correspond to the references in FIG. 12.

Next, a study on the characteristics of the thin film formed with thepresent invention is described below. As shown in FIG. 14, theoxygen/TMS flow ratios at varying velocities of etching on the depositedfilm are determined using a solution including 6% of HF and 30% of NH₃F. These determined values show that, as oxygen/TMS increases, theetching velocity decreases and the film is further nitrogenized. Thus,it is found preferable to increase the oxygen flow rate and make theoxygen/TMS flow ratio larger for a good quality deposit film.

After the thin film deposition on the substrate, the substrate isthermally treated in the reaction vessel with the two methods below.

(1) Maintain the substrate temperature at 300° C. in oxygen of 10 Torrfor 1 hour.

(2) While discharging microwaves into the oxygen of 2 Torr, maintain thesubstrate temperature at 300° C. for 1 hour.

The absorption strength changes of Si--CH₃, Si--H and O--H specifiedwith the Si--O--Si peak absorption of the infrared absorption spectrafor the film obtained from the above versus oxygen/TMS flow ratio isshown in FIG. 15. The combination of Si--CH₃ and O--H decreases firstduring the thermal treatment of (1), and second during the thermaltreatment in (2), and the silicon oxidization proceeds. It was foundthat the combination of Si--H disappears during the treatment processesof (1) and (2). In conclusion, to improve the film quality of thedeposited film, the substrate temperature should be at least 300° C. Thethermal treatment in (1) and (2) above can promote oxidization ofsilicon, and it has been observed that, in particular, the oxidizationcaused by the thermal treatment process (2) is remarkable.

Radiation of an ArF excimer laser with a wave length of 193 nm duringthe film forming activates the liquefied layer or substrate surface,resulting in a further flatness of the filled trench throughexperiments. Radiation energy of the ArF excimer laser is then 330Joul/cm² sec. As the activation proceeds more when the energy is notless than this value, this activation will occur when the energy is 330Joul/cm² or higher. This activation is performed by an impact with ions,electrons, etc., on the substrate surface, and this will enhance thesurface migration of the active species to the thin film to promote theflatness of the filled trench surface.

The above-mentioned thin film forming apparatus have separated vesselsincluding one for plasma forming and another for the reaction. Theinvention may be also applied to the one vessel type thin film formingapparatus.

FIG. 16 is a schematic view showing a thin film forming apparatusaccording to one embodiment of this invention. In FIG. 16, 101 denotes agrounded vacuum vessel forming the reaction vessel. Prescribed first andsecond reactive gases are introduced into the reaction vessel 101through a gas inlet 102. The mixed gas contained in the reaction vesselis exhausted through a gas outlet 103. In the reaction vessel 101, acathode (first electrode) 105 is disposed opposite the top wall of thevacuum vessel serving as an anode (second electrode).

On the first electrode is placed a substrate 106, and a cooled nitrogengas is passed over this electrode for cooling. A heating device (notshown) is also provided to raise the temperature. Further, the firstelectrode is connected to a high frequency power source 109 through amatching circuit 108. A heater 111 is coiled around a wall matchingcircuit 108. A heater 111 is coiled around a wall 110 of the reactionvessel 101, thereby preventing adhesion of the deposition film. Althoughit is not illustrated, another vacuum vessel which is vacuous or filledwith an inert gas is disposed between the above reaction vessel 101 andthe atmosphere for loading and unloading substrate 106.

Thus, the reliability of the process is greatly enhanced by making thereaction vessel a so-called load-lock type. In the same drawing, 116denotes an insulator. Further, another embodiment is shown in FIG. 17.Parts identical with those shown in FIG. 16 are assigned the samereference numbers.

In this embodiment, a thin film was deposited on a substrate 106 in thesame way as in the above embodiment and the substrate 106 was moved toanother reaction vessel 112 with a carrier (not shown) and placed on aholder 113 and heated thereon by a heating means (not shown). Inaddition to the heating from the substrate side, this heating treatmentmay be effected by raising the substrate temperature instantaneouslywith an infrared lamp irradiated just above the substrate 106, forexample. Further, an inert gas or the first reactive gas may beintroduced through a gas inlet 102a during this heating treatment. Also,a high frequency power source 109 is connected via a matching circuit108, so that the plasma can be generated during the heating treatment.

In the drawing, number 115 denotes a gate valve. This invention may beapplied in various ways. For example, a magnetic field may be suppliedfrom outside between parallel plate electrodes applied with the above RFpower as a means to generate the plasma, thereby generating ahigh-density plasma. Also, electrical discharge may be generated by ECR(Electron Cyclotron Resonance) discharge, a hollow cathode discharge, orby suppling high frequency power from outside with the substratedisposed in a vacuum vessel of an insulator, such as a quartz.

Another thin film depositing process according to the present inventionusing the apparatus shown in FIG. 16 will be described below. Oxygen anda tetramethylsilane Si(CH₃)₄ (TMS) as the first and second reactivegases are inserted into the reaction vessel 101.

FIG. 18 shows how the silicon oxide film is formed on the siliconsubstrate. The lateral axis indicates the temperatures of the substrateand the vertical axis shows the deposition velocity. The cross sectionsshow different filled shapes formed within the trench of the substrate.The plasma is generated by applying an RF power of 13.56 MHz between thefirst and second electrodes to cause a high frequency electricaldischarge. In the reaction vessel, oxygen is introduced at a ratio of 40cc/minute and TMS 5 cc/minute. The total pressure is 5×10⁻³ Torr.

A magnet is disposed on the second electrode side to allow high-densityplasma to be obtained. It is seen from FIG. 18 that the depositionvelocity exhibits a maximum value with respect to changes of thesubstrate temperature. It is seen by observing the filled shape withinthe trench, that when the aspect ratio of the trench is one or more,SiO₂ produced by the reaction of the oxygen radical and TMS in thegaseous phase at a temperature above room temperature as shown in FIG.18(c) is deposited on the substrate similar to falling snow, as seen inthe so-called conventional plasma CVD process, and the cavity is formed.

On the other hand, it is seen that with a decrease of the substratetemperature, the deposit which is predominantly formed on the corner ofthe trench is reduced and when the substrate temperature is -20° C. orless the trench can be completely filled. This phenomenon is believed totake place in the following manner. The reaction products of the oxygenradical and TMS, such as hexamethylsiloxane (Si(CH₃)₂)₂ O andtrimethyldisiloxane Si(CH₃)₃ OH, liquefy at the temperatures as shown inFIG. 18 and liquid is formed as a layer on the substrate surface. Thisliquid layer catches therein SiO₂ species which have further reacted inthe gaseous phase.

It is believed that the oxidation proceeds accompanying the inclusion ofthe oxygen radical and the tacking in of the oxygen ions. On the otherhand, the above liquid layer is finely dispersed over the substratesurface and therefore it exists most stably on the bottom corner of thetrench to provide a large contact area in the substrate surface. As aresult, observation of deposition overtime indicates that the deposit isfirst formed on the corner. Therefore, as shown in FIG. 19, the depositaccumulates from the bottom of the trench upward to form a film, makingit possible to fill a trench with a high aspect ratio and to provide avery even surface, which could not be done heretofore.

It is possible also to form a film at a low temperature. This iseffective for the formation of an interlaminar insulation film in themultilayered wiring process. Using nitrogen or NH₄ instead of oxygen, asilicon nitride film (Si₃ N₄) can be formed. It is needless to say thatby using a material containing at least one element which is included ingroups II to VI of the periodic table as the second reactive gas andsuitably varying the substrate temperature, oxide and nitride can beformed readily.

It is also needless to mention that the gas pressure in the reactionvessel is not limited to the above-mentioned 10⁻³ Torr but can beselected to fall in the most effective pressure range according to thedischarging method and the reactive gas used.

Addition of an inert gas such as argon or helium to the first reactivegas prolongs the service life of the deposition species as a metastableactive species and provides more effective deposition. The reaction gasto be used may be one type and a desired film may be deposited by aprocess such as thermal decomposition. It was experimentally confirmedthat in the process of forming the film, the irradiation with an excimerlaser having a wavelength of 193 nm, or with ions, electrons or thelike, enhances the activity of the above liquefied layer, increasing thesurface migration of the active species within the layer and completingthe filling of the trenches, making the film completely flat.

In the formation of the above silicon oxide film, when impurities suchas POCl₂, PCl₃, PH₃, BCl₃, B₂ H₆ and AsH₄ are added to TMS, for example,the oxide film produced includes these impurities. This film fills thetrench. Then it is heated instantaneously with a heater or a lamp, forexample. This disperses the impurities into the silicon substrate.Heretofore, an oxide film containing the impurities along the walls wasproduced by the thermal CVD process. However, the concentration of theimpurities contained in the oxide film which is formed along the sidewalls of the trench is lower than in the planar portion. Thus, a desiredspecific resistance could not be attained from the side walls.

The oxide film according to the present invention includes theimpurities in a very uniform amount as shown in FIG. 19 describing thedepositing state with the lapse of time. Therefore, after depositing, asshown in FIG. 20, a thermal treatment is given to remedy the abovedrawbacks completely. The dispersion layer as shown in FIG. 20 isessential to provide a sufficient memory capacity for large scale memorydevices, such as 16M and 64M DRAMs. The above thermal treatment, wheneffected after the film formation, for example in situ within thetreating chamber as shown in FIG. 16 or FIG. 17, can completely avoidthe contamination by the impurities other than the prescribedimpurities, such as carbon, nickel and other heavy metals. Thus, a highquality film is deposited.

The inclusion of gas containing a hydrogen and a halogen element in thereactive gas reduces the methyl group contained in the TMS, and morestable CH₄ and CH₃ Cl are produced and removed, resulting in thelowering of the concentration of the carbon impurities. Thus, the filmquality is much enhanced. AsH₄ is used as an impurity to be added to thesecond reaction gas in this example, but in case of phosphor (P)diffusion, a material such as POCl₃, PCl₃ and PH₃ which reacts with thefirst or second reactive gas element to produce phosphor, may be used.In case of boron (B) diffusion, BCl₃, B₂ H₆, etc., may be used. Forexample, it was confirmed that when the organic metal compounds such asAl(CH₃)₃, Ti(C₅)₂, carbonyl metals, such as W(CO)₆ and Cr(CO)₆, andhalogenated metals are used together with hydrogen and nitrogen, metalscan entirely fill in a space with a high aspect ratio, such as a contacthole.

In addition to the above thin film forming, using for examples GeH₄,SiH₄, SiCl₄, GeCl₄, and a gas including at least silicon, the depositionof silicon and germanium can be done. Using As(CH₃)₃, AsH₃, Ga(CH₃)₃ andGaH₃, GaAs and other group III-V compounds can be deposited and using areactive gas containing indium and phosphor, InP and other group II-VIcompounds can be deposited.

Further, using a reactive gas containing at least carbon and hydrogen,various high molecular organic films can be deposited. For example, whenmethylmethacrylate (MMA) is introduced and the substrate temperature islowered to -30° C. or less, PMMA, which is used for an electron beamresist, can be formed.

Proceeding now to the explanation of another embodiment relating to thethin film forming process of this invention, a macromolecule thin filmforming process using hydrogen, nitrogen or gases including a halogenelement, such as SiCl₄, as the first reactive gas, and a gas at leastincluding carbon and hydrogen as the second reactive gas, is describedbelow. This process is basically the same as above-mentioned embodiment,and is briefly described with reference to FIG. 3.

The substrate used here has an unevenly configuraed surface providedwith the trench having an aspect ratio of one or more. Nitrogen (N₂) gasis used as the first reactive gas, and N* radical is introduced into thereaction vessel by discharging. Methylmethacrylate (MMA) is introducedas the second reactive gas and the exhaustion is conducted.

The substrate temperature is cooled to -30° C. or less. This results inthe covering of the unevenness on the surface of the substrate with afilm of PMMA, a polymer of MMA, for the same principle as the oneillustrated in FIG. 1, to achieve a super flatness. The PMMA film is, aseveryone knows, widely used as an electron beam resist.

Another embodiment relating to the thin film forming process of thepresent invention is explained below. FIG. 21 is the sectional view ofthe final process showing the formation of the source, a drain electrodeand a wiring for a MOS transistor using the process of this embodiment.

A gate oxide film 71 and a gate electrode 72 are formed on a siliconsubstrate 70, and the source and the drain areas 73, 74 are integrallyformed to the gate. After the coating of the entire surface with asilicon oxide film 75 using a CVD process, etc., the silicon oxide film75 on the source and the drain 73, 74 is partially removed by etching toform a contact holes 76 with an aspect ratio of one or more.

A wiring 77 for the source and the drain electrodes is next formed withthe method of this invention. In particular hydrogen is used as thefirst reactive gas and Al(CH₃)₃ as the second reactive gas, and thesubstrate temperature is set at a specified value to fill the alminiumelectrode wiring 77 completely into the contact hole 76 and form a superflatness by repeated deposition. After patterning of the electrodewiring 77, a silicon oxide film 78 is formed as protective film all overthe surface. This protective film 78 can be formed by the process ofthis invention. By covering the wiring and the trenches formed by theCVD oxide film 75 with a protective film utilizing the same method asshown in the first embodiment, a flat film can be formed.

In this embodiment, the mechanical vibration of the substrate 70 duringthe forming of the electrode wiring 77 disturbs a trench retaining layer(a stagnant layer) of the gaseous phase to promote the deposition of thealminium film on the substrate 70. Such vibration of the substrateitself, or the gaseous phase during the thin film forming is effectiveto increase the deposition velocity and to improve the film quality.

As a means to create vibrations, a motor, etc., may be provided at thesample holder 2, as shown in FIGS. 2 through 4, to produce themechanical vibration, or a supersonic wave oscillator may beincorporated in the holder 2.

Although, alminium is used for the metal filling the trenches, such asthe MOS transistor contacts, etc., in this embodiment, the secondreactive gas can be Ti(C₂ H₅)₂, carbonyl metal, such as W(CO)₆ orCr(CO)₆, or halide metal, etc., instead of Al(CH₃)₃.

Embodiments of the present invention are explained above and someadditional examples are described below. In place of the oxygendischarge in these embodiments, gases at least including an oxide, suchas N₂ O, can be used. By using nitrogen or NH₃, formation of a siliconnitride film is possible. When using a gas including at least oneelement of the second to sixth group in the periodic table, the oxidefilms can produce the nitride. The substrate temperature at that timecan be set at a value not more than the liquefaction points of theactive species of the first reactive gas, the second reactive gas andtheir reaction product, depending on the type of gases.

Mixing inert gases such as argon or helium with the first reactive gasgenerates long-life metastable active species of these inert gases.These active species can carry the active species of the first reactivegas, and this results in high flexibility of the device design.

Other than the thin film forming above, for example, silicon orgermanium deposition is possible using hydrogen as the first reactivegas and using a gas containing at least germanium or silicon such asGeH₄, SiH₄, SiCl₄ and GeCl₄ as the second reactive gas. Group III to Vcompound, such as GaAs can be deposited when the second reactive gas isAs(CH₃), AsH₃, Ga(CH)₃ or GaH₃, and group II-VI compounds, such as InP,may be used when some reactive gas includes indium and phosphor.

The thin film forming process explained above using raw material gas ofthe thin film as the second reactive gas (for example, Al(CH₃)₄ +H₂) canproduce the same effect.

In FIGS. 2 through 4, the rotating mechanism can be connected to thesample holder 12 for supporting the substrate 3 so that the substrate 3is rotated at a high velocity and the reactive gas diffuses uniformly.The rotation may be at a fixed velocity, or may be intermittent to avoida rotation of the gaseous phase with the substrate.

The configuration above can increase the deposition velocity more, andreduce variations in the deposition velocity and the deposition filmcomposition on the substrate. Such variations result from the differenceof the distance from the gas inlet port 4 and 5 to the surface of thesubstrate 3, even in the case of a large-sized substrate, such as asilicon wafer. For radiation by electrons, ions and light, such as laserbeam, this is convenient because it can compensate for beam variations,and a large diameter beam is not necessary.

A plurality of substrates can be simultaneously introduced to thereaction vessel in FIGS. 2 through 4. For example, with a reactionvessel in the shape of a rectangular parallelepiped, four surfaces areprovided with substrates, another substrate is used for putting in andtaking out of the substrates, and an other surface for vacuum exhaustand the introduction of the first and the second reactive gas. In thiscase, too, each substrate is placed an equal distance from the gas inletport to form a uniform thin film.

As explained above, the invention can be changed without departing fromthe scope of the invention.

The invention can achieve a better filling than with the prior artwithout causing radiation damage of insulation, semiconductor, metal,etc., to realize a flatness even for the trench with a high aspectratio.

What is claimed:
 1. A thin film forming method, comprising the stepsof:supporting a semiconductor substrate having a trench or an unevennessthereon in a reaction vessel; introducing a reactive gas into thereaction vessel; activating the reactive gas to form a deposit species;exhausting the interior of the reaction vessel; and cooling thesemiconductor substrate below the liquefaction temperature of thedeposit species to cause the deposit species to become a materialdeposited on the semiconductor substrate.
 2. The thin film formingmethod of claim 1 wherein the deposit material includes an activespecies of the reactive gas.
 3. The thin film forming method of claim 1wherein the deposit material includes reaction products produced duringactivation of the reactive gas.
 4. The thin forming method of claim 1wherein the step of activating the reactive gas includes the step ofgenerating a plasma.
 5. The thin film forming method of claim 1 whereinthe step of activating the reactive gas includes the step of thermallyactivating the reactive gas.
 6. The thin film forming method of claim 1wherein the step of activating the reactive gas includes the step oflight activating the reactive gas.
 7. The thin film forming method ofclaim 1 wherein the step of activating the reactive gas includes thestep of electron beam activating the reactive gas.
 8. The thin filmforming method of claim 6 wherein the step of light activating includesthe step of laser beam activating the reactive gas.
 9. The thin filmforming method of claim 1, further comprising the step of heating thesemiconductor substrate.
 10. The thin film forming method of claim 1wherein the reactive gas includes an impurity to change the conductivityof the semiconductor substrate.
 11. The thin film forming method ofclaim 1 wherein the aspect ratio of the trench is one or more.
 12. Thethin film forming method of claim 1 wherein the reactive gas isactivated within the reaction vessel supported the substrate therein.13. The thin film forming method of claim 1 wherein the reactive gas isactivated in the other portion of the reaction vessel supporting thesubstrate therein.
 14. The thin film forming method of claim 1 whereinthe deposit material is an insulator.
 15. The thin film forming methodof claim 1 wherein the deposit material is semiconductor.
 16. The thinfilm forming method of claim 1 wherein the deposit material is polymer.17. The thin film forming method of claim 1 wherein the deposit materialis a metal.
 18. The thin film forming method of claim 1 wherein thesubstrate has a mask formed thereon.
 19. The thin film forming method ofclaim 14 wherein insulator is silicon oxide.
 20. The thin film formingmethod of claim 1 wherein the deposit species is heated after thedeposit species is formed.
 21. The thin film forming method of claim 20wherein heating is instantaneous.
 22. The thin film forming method ofclaim 1 wherein the substrate is supported electrostatically by a sampleholder.
 23. The thin film forming method of claim 1 wherein thesubstrate and the reactive gas are vibrated relatively.
 24. The thinfilm forming method of claim 1 wherein the step of introducing thereactive gas includes the step of supplying two types of gases.
 25. Thethin film forming method of claim 24 wherein the substrate issemiconductor.
 26. The thin film forming method of claim 24, furthercomprising the step of heating the semiconductor substrate.
 27. The thinfilm forming method of claim 24 wherein the aspect ratio of the trenchis one or more.
 28. The thin film forming method of claim 24 wherein thedeposit material is an insulator.
 29. The thin film forming method ofclaim 24 wherein the deposit material is semiconductor.
 30. The thinfilm forming method of claim 24 wherein the deposit material is polymer.31. The thin film forming method of claim 24 wherein the depositmaterial is metal.
 32. The thin film forming method of claim 24 whereinthe substrate has a mask formed thereon.
 33. The thin film formingmethod of claim 25 wherein the deposit material is an insulator.
 34. Thethin film forming method of claim 33 wherein insulator is silicon oxide.35. The thin film forming method of claim 24 wherein the deposit speciesis heated after the deposit species is formed.
 36. The thin film formingmethod of claim 34 wherein heating is instantaneous.
 37. The thin filmforming method of claim 24 wherein the substrate is supportedelectrostatically by a sample holder.
 38. The thin film forming methodof claim 24 wherein the substrate and the reactive gas are vibratedrelatively.
 39. The thin film forming method of claim 24 wherein thefirst reactive gas is activated within the reaction vessel supportingthe substrate therein.
 40. The thin film forming method of claim 24wherein the first reactive gas is activated in the other portion of thereaction vessel supporting the substrate therein.
 41. The thin filmforming method of claim 24 wherein the first reactive gas includes atleast one of oxygen, nitrogen, hydrogen or a gas containing at leasthalogen element.
 42. The thin film forming method of claim 24 whereinthe first reactive gas includes at least one of inert gases.
 43. Thethin film forming method of claim 24 wherein the first reactive gasincludes at least one of oxygen, nitrogen or hydrogen, and the secondreactive gas includes at least one element included in the II to VIgroups of the periodic table.
 44. The thin film forming method of claim24 wherein the first reactive gas includes at least one of hydrogen,nitrogen or a gas containing at least halogen element and the secondreactive gas includes at least one of organic compound, halide orcarbonyl of the metal or semiconductor.
 45. The thin film forming methodof claim 24 wherein the second reactive gas includes one of tetramethylsilane, hexamethyldisiloxane or trimetyl silanol.
 46. The thin filmforming method of claim 45 wherein the first reactive gas is oxygen. 47.The thin film forming method of claim 46 wherein the flow ratio of thefirst reactive gas to the second reactive gas at 2 or more and thetemperature of the substrate from 20° C. to -100° C. and keeping thetotal internal pressure of the reaction vessel less than 10 Torr. 48.The thin film forming method of claim 45 wherein the step of activatingincludes the step of radiating the laser beam with the power of 330Joul/cm² sec.
 49. The thin film forming method of claim 47 wherein thestep of activating includes the step of radiating the laser beam withthe wave length of 200 nm or less and with the power of 330 Joul/cm²sec.
 50. The thin film forming method of claim 47 wherein the pressurein the reaction vessel and the temperature of the substrate are set at acondition where the contact angle of the liquefied globule of the secondreactive gas and the substrate becomes acute.
 51. The thin film formingmethod of claim 47 wherein after the formation of the deposit material,the substrate is heated at 300° C. or more with flowing oxygen or oxygenradical.